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| STD95N4F3 STP95N4F3 - STU95N4F3 N-channel 40V - 5.4m - 80A - DPAK - TO-220 - IPAK STripFETTM Power MOSFET General features Type STD95N4F3 STP95N4F3 STU95N4F3 VDSS 40V 40V 40V RDS(on) <6.5m <6.5m <6.5m ID 80A 80A 80A Pw 110W 110W 110W 1 3 1 3 2 3 2 1 Standard threshold drive 100% avalanche tested DPAK TO-220 IPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique "Single Feature SizeTM"strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications Switching application Order codes Part number STD95N4F3 STP95N4F3 STU95N4F3 Marking 95N4F3 95N4F3 95N4F3 Package DPAK TO-220 IPAK Packaging Tape & reel Tube Tube February 2007 Rev 1 1/14 www.st.com 14 Contents STD95N4F3 - STP95N4F3 - STU95N4F3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STD95N4F3 - STP95N4F3 - STU95N4F3 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID (1) ID IDM (2) PTOT Absolute maximum ratings Parameter Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 40 20 80 65 320 110 0.73 8 400 -55 to 175 Unit V V A A A W W/C V/ns mJ C dv/dt (3) EAS (4) Tj Tstg Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature Storage temperature 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD < 80 A, di/dt < 400A/s, VDS < V(BR)DSS, Tj < Tjmax 4. Starting Tj = 25C, ID = 40A, VDD = 30V Table 2. Symbol Rthj-case Rthj-a Thermal resistance Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction-ambient max 62.5 -300 IPAK 1.36 100 -275 -50 -DPAK C/W C/W C/W C Unit Rthj-pcb (1) Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose 1. When mounted on 1inch FR-4 2Oz Cu board 3/14 Electrical characteristics STD95N4F3 - STP95N4F3 - STU95N4F3 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Static Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating,Tc = 125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 40A 2 5.4 Min. Typ. Max. Unit 40 10 100 200 V A A nA V m 4 6.5 Table 4. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =25V, ID=40A Min Typ. Max. Unit 100 2200 580 40 40 11 8 54 S pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 VDD=20V, ID = 80A VGS =10V (see Figure 13) 1. Pulsed: pulse duration = 300s, duty cycle 1.5% 4/14 STD95N4F3 - STP95N4F3 - STU95N4F3 Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Rise time Test conditions VDD=20V, ID= 40A, RG=4.7, VGS=10V (see Figure 15) VDD=20V, ID= 40A, RG=4.7, VGS=10V (see Figure 15) Min. Typ. 15 50 Max. Unit ns ns Turn-off delay time Fall time 40 15 ns ns Table 6. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, VGS=0 ISD=80A, di/dt = 100A/s, VDD=30V, Tj=150C (see Figure 14) 45 60 2.8 Test conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns nC A VSD (2) trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5% 5/14 Electrical characteristics STD95N4F3 - STP95N4F3 - STU95N4F3 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Static drain-source on resistance Figure 6. Normalized BVDSS vs temperature 6/14 STD95N4F3 - STP95N4F3 - STU95N4F3 Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/14 Test circuit STD95N4F3 - STP95N4F3 - STU95N4F3 3 Test circuit Figure 13. Gate charge test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform 8/14 STD95N4F3 - STP95N4F3 - STU95N4F3 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STD95N4F3 - STP95N4F3 - STU95N4F3 DPAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0 8 0 1 0.023 0.008 8 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch 0068772-F 10/14 STD95N4F3 - STP95N4F3 - STU95N4F3 Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 11/14 Packaging mechanical data STD95N4F3 - STP95N4F3 - STU95N4F3 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 12/14 STD95N4F3 - STP95N4F3 - STU95N4F3 Revision history 6 Revision history Table 7. Date 22-Feb-2007 Revision history Revision 1 First release Changes 13/14 STD95N4F3 - STP95N4F3 - STU95N4F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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